We demonstrate electrical control of ferromagnetism in field-effect transistors with a trilayer quantum well (QW) channel containing an ultrathin n-type ferromagnetic semiconductor (In,Fe)As layer. A gate voltage is applied to control the electron wa
vefunctions {phi}i in the QW, such that the overlap of {phi}i and the (In,Fe)As layer is modified. The Curie temperature is largely changed by 42%, whereas the change in sheet carrier concentration is 2 - 3 orders of magnitude smaller than that of previous gating experiments. This result provides a new approach for versatile, low power, and ultrafast manipulation of magnetization.
In this review, we present a comprehensive overview of superconductivity in electron-doped metal nitride halides $M$N$X$ ($M$ = Ti, Zr, Hf; $X$ = Cl, Br, I) with layered crystal structure and two-dimensional electronic states. The parent compounds ar
e band insulators with no discernible long-range ordered state. Upon doping tiny amount of electrons, superconductivity emerges with several anomalous features beyond the conventional electron-phonon mechanism, which stimulate theoretical investigations. We will discuss experimental and theoretical results reported thus far and compare the electron-doped layered nitride superconductors with other superconductors.
