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92 - Yu.A. Genenko , H. Rauh 2009
Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Beans model of the critical state. For the shields oriented parallel to the plane of the str ip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconductor slab, whereas for the shields oriented perpendicular to the plane of the strip, penetration of the self-induced magnetic field is impaired, and the current dependence of the ac loss is similar to that in a superconductor strip flanked by two parallel superconducting shields. Thus, hysteretic ac losses can strongly augment or, respectively, wane when the shields approach the strip.
Migration of charged point defects triggered by the local random depolarization field is shown to plausibly explain aging of poled ferroelectric ceramics providing reasonable time and acceptor concentration dependences of the emerging internal bias f ield. The theory is based on the evaluation of the energy of the local depolarization field caused by mismatch of the polarizations of neighbor grains. The kinetics of charge migration assumes presence of mobile oxygen vacancies in the material due to the intentional or unintentional acceptor doping. Satisfactory agreement of the theory with experiment on the Fe-doped lead zirconate titanate is demonstrated.
We study the magnetization of a cylindrical type-II superconductor filament covered by a coaxial soft-magnet sheath and exposed to an applied transverse magnetic field. Examining penetration of magnetic flux into the superconductor core of the filame nt on the basis of the Bean model of the critical state, we find that the presence of a non-hysteretic magnetic sheath can strongly enhance the field of full penetration of magnetic flux. The average magnetization of the superconductor/magnet heterostructure under consideration and hysteresis AC losses in the core of the filament are calculated as well.
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