Specific heat and electronic states of superconducting boron-doped silicon carbide

The discoveries of superconductivity in the heavily-boron doped semiconductors diamond (C:B) in 2004 and silicon (Si:B) in 2006 have renewed the interest in the physics of the superconducting state of doped semiconductors. Recently, we discovered superconductivity in the closely related mixed system heavily boron-doped silcon carbide (SiC:B). Interestingly, the latter compound is a type-I superconductor whereas the two aforementioned materials are type-II. In this paper we present an extensive analysis of our recent specific-heat study, as well as the band structure and expected Fermi surfaces. We observe an apparent quadratic temperature dependence of the electronic specific heat in the superconducting state. Possible reasons are a nodal gap structure or a residual density of states due to non-superconducting parts of the sample. The basic superconducting parameters are estimated in a Ginzburg-Landau framework. We compare and discuss our results with those reported for C:B and Si:B. Finally, we comment on possible origins of the difference in the superconductivity of SiC:B compared to the two parent materials C:B and Si:B.

Anomalous In-Plane Anisotropy of the Onset of Superconductivity in (TMTSF)2ClO4

We report the magnetic field-amplitude and field-angle dependence of the superconducting onset temperature Tc_onset of the organic superconductor (TMTSF)2ClO4 in magnetic fields H accurately aligned to the conductive ab plane. We revealed that the rapid increase of the onset fields at low temperatures occurs both for H // b and H // a, irrespective of the carrier confinement. Moreover, in the vicinity of the Pauli limiting field, we report a shift of a principal axis of the in-plane field-angle dependence of Tc_onset away from the b axis. This feature may be related to an occurrence of Fulde-Ferrell-Larkin-Ovchinnikov phases.