We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator Bi$_2$Se$_3$ to study the ultrafast dynamics of surface and bulk electrons after photo-excitation. By analyzing the evolution of surface states and
bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.
A differential coupling of topological surface states to left- versus right-circularly polarized light is the basis of many opto-spintronics applications of topological insulators. Here we report direct evidence of circular dichroism from the surface
states of Bi$_2$Se$_3$ using a laser-based time-of-flight angle-resolved photoemission spectroscopy. By employing a novel sample rotational analysis, we resolve unusual modulations in the circular dichroism photoemission pattern as a function of both energy and momentum, which perfectly mimic the predicted but hitherto un-observed three-dimensional warped spin-texture of the surface states. By developing a microscopic theory of photoemission from topological surface states, we show that this correlation is a natural consequence of spin-orbit coupling. These results suggest that our technique may be a powerful probe of the spin-texture of spin-orbit coupled materials in general.
The purpose of this paper is to apply characteristics of residual stress that causes cantilever beams to bend for manufacturing a micro-structured gas flow sensor. This study uses a silicon wafer deposited silicon nitride layers, reassembled the gas
flow sensor with four cantilever beams that perpendicular to each other and manufactured piezoresistive structure on each micro-cantilever by MEMS technologies, respectively. When the cantilever beams are formed after etching the silicon wafer, it bends up a little due to the released residual stress induced in the previous fabrication process. As air flows through the sensor upstream and downstream beam deformation was made, thus the airflow direction can be determined through comparing the resistance variation between different cantilever beams. The flow rate can also be measured by calculating the total resistance variations on the four cantilevers.
