Plasmons in the van der Waals charge-density-wave material 2H-TaSe2

Plasmons in two-dimensional (2D) materials beyond graphene have recently gained much attention. However, the experimental investigation is limited due to the lack of suitable materials. Here, we experimentally demonstrate localized plasmons in a correlated 2D charge-density-wave (CDW) material: 2H-TaSe2. The plasmon resonance can cover a broad spectral range from the terahertz (40 {mu}m) to the telecom (1.55 {mu}m) region, which is further tunable by changing thickness and dielectric environments. The plasmon dispersion flattens at large wave vectors, resulted from the universal screening effect of interband transitions. More interestingly, anomalous temperature dependence of plasmon resonances associated with CDW excitations is observed. In the CDW phase, the plasmon peak close to the CDW excitation frequency becomes wider and asymmetric, mimicking two coupled oscillators. Our study not only reveals the universal role of the intrinsic screening on 2D plasmons, but also opens an avenue for tunable plasmons in 2D correlated materials.

Use the Spear as a Shield: A Novel Adversarial Example based Privacy-Preserving Technique against Membership Inference Attacks

Recently, the membership inference attack poses a serious threat to the privacy of confidential training data of machine learning models. This paper proposes a novel adversarial example based privacy-preserving technique (AEPPT), which adds the crafted adversarial perturbations to the prediction of the target model to mislead the adversarys membership inference model. The added adversarial perturbations do not affect the accuracy of target model, but can prevent the adversary from inferring whether a specific data is in the training set of the target model. Since AEPPT only modifies the original output of the target model, the proposed method is general and does not require modifying or retraining the target model. Experimental results show that the proposed method can reduce the inference accuracy and precision of the membership inference model to 50%, which is close to a random guess. Further, for those adaptive attacks where the adversary knows the defense mechanism, the proposed AEPPT is also demonstrated to be effective. Compared with the state-of-the-art defense methods, the proposed defense can significantly degrade the accuracy and precision of membership inference attacks to 50% (i.e., the same as a random guess) while the performance and utility of the target model will not be affected.

NaturalAE: Natural and Robust Physical Adversarial Examples for Object Detectors

In this paper, we propose a natural and robust physical adversarial example attack method targeting object detectors under real-world conditions. The generated adversarial examples are robust to various physical constraints and visually look similar to the original images, thus these adversarial examples are natural to humans and will not cause any suspicions. First, to ensure the robustness of the adversarial examples in real-world conditions, the proposed method exploits different image transformation functions, to simulate various physical changes during the iterative optimization of the adversarial examples generation. Second, to construct natural adversarial examples, the proposed method uses an adaptive mask to constrain the area and intensities of the added perturbations, and utilizes the real-world perturbation score (RPS) to make the perturbations be similar to those real noises in physical world. Compared with existing studies, our generated adversarial examples can achieve a high success rate with less conspicuous perturbations. Experimental results demonstrate that, the generated adversarial examples are robust under various indoor and outdoor physical conditions, including different distances, angles, illuminations, and photographing. Specifically, the attack success rate of generated adversarial examples indoors and outdoors is high up to 73.33% and 82.22%, respectively. Meanwhile, the proposed method ensures the naturalness of the generated adversarial example, and the size of added perturbations is much smaller than the perturbations in the existing works. Further, the proposed physical adversarial attack method can be transferred from the white-box models to other object detection models.

Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers

Recently, Weyl semimetals have been experimentally discovered in both inversion-symmetry-breaking and time-reversal-symmetry-breaking crystals. The non-trivial topology in Weyl semimetals can manifest itself with exotic phenomena which have been extensively investigated by photoemission and transport measurements. Despite the numerous experimental efforts on Fermi arcs and chiral anomaly, the existence of unconventional zeroth Landau levels, as a unique hallmark of Weyl fermions which is highly related to chiral anomaly, remains elusive owing to the stringent experimental requirements. Here, we report the magneto-optical study of Landau quantization in Weyl semimetal NbAs. High magnetic fields drive the system towards the quantum limit which leads to the observation of zeroth chiral Landau levels in two inequivalent Weyl nodes. As compared to other Landau levels, the zeroth chiral Landau level exhibits a distinct linear dispersion in z momentum direction and allows the optical transitions without the limitation of zero z momentum or square root of magnetic field evolution. The magnetic field dependence of the zeroth Landau levels further verifies the predicted particle-hole asymmetry of the Weyl cones. Meanwhile, the optical transitions from the normal Landau levels exhibit the coexistence of multiple carriers including an unexpected massive Dirac fermion, pointing to a more complex topological nature in inversion-symmetry-breaking Weyl semimetals. Our results provide insights into the Landau quantization of Weyl fermions and demonstrate an effective tool for studying complex topological systems.

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films

Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries has been proposed to enable the manipulation of Dirac fermions; and that was soon realized by external modulations such as magnetic fields. However, an intrinsic manipulation of Dirac states, which is more efficient and desirable, remains a significant challenge. Here, we report a systematic study of quasi-particle dynamics and band evolution in Cd3As2 thin films with controlled Chromium (Cr) doping by both magneto-infrared spectroscopy and electrical transport. For the first time, we observe square-root-B relation of inter-Landau-level resonance in undoped Cd3As2 Dirac semimetal, an important signature of ultra-relativistic Dirac state inaccessible in previous optical experiments. A crossover from quantum to quasi-classical behavior makes it possible to directly probe the mass of Dirac fermions. Importantly, Cr doping allows for a Dirac mass acquisition and topological phase transition enabling a desired dynamic control of Dirac fermions. Corroborating with the density-functional theory calculations, we show that the mass generation is essentially driven by explicit C4 rotation symmetry breaking and the resultant Dirac gap engineering through Cr substitution for Cd atoms. The manipulation of the system symmetry and Dirac mass in Cd3As2 thin films provides a tuning knob to explore the exotic states stemming from the parent phase of Dirac semimetals.

ReS2-based field-effect transistors and photodetectors

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2 field-effect transistors via the encapsulation of ReS2 nanosheets in a high-k{appa} Al2O3 dielectric environment. Low-temperature transport measurements allowed us to observe a direct metal-to-insulator transition originating from strong electron-electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14 A/W and external quantum efficiency reaching 3,168 %, showing a competitive device performance to those reported in graphene, MoSe2, GaS and GaSe-based photodetectors. Our study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.