Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS
originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films.
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth
of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.
