We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous valley Hall r
esponse since they fall into the same universality class of pseudospin structure. However, such argument fails for the coupling mechanism with position-dependent Fermi velocity. For the isotropic case, a significant valley Hall effect occurs near charge neutrality similar to the bond-length change, whereas for the anisotropic case, the geometric valley transport is suppressed, akin to the deformation potential. Gap opening mechanism by nonuniform strain is found to totally inhibit the valley Hall transport, even if the dynamics of strains are introduced. By varying gate voltage, a tunable phonon-assisted valley Hall response can be realized, which paves a way toward rich phenomena and new functionalities of valley acoustoelectronics.
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conducti
vity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the valley Hall effect in graphene systems represents a new paradigm for the anomalous Hall physics where gauge disorder plays an important role.
We show that the exciton optical selection rule in gapped chiral fermion systems is governed by their winding number $w$, a topological quantity of the Bloch bands. Specifically, in a $C_N$-invariant chiral fermion system, the angular momentum of bri
ght exciton states is given by $w pm 1 + nN$ with $n$ being an integer. We demonstrate our theory by proposing two chiral fermion systems capable of hosting dark $s$-like excitons: gapped surface states of a topological crystalline insulator with $C_4$ rotational symmetry and biased $3R$-stacked MoS$_2$ bilayers. In the latter case, we show that gating can be used to tune the $s$-like excitons from bright to dark by changing the winding number. Our theory thus provides a pathway to electrical control of optical transitions in two-dimensional material.
By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $bm k$-spac
e area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other relativistic terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.
Strong Rashba spin-orbit coupling (SOC) of the two-dimensional electron gas (2DEG) at the oxide interface $mathrm{LaAlO_{3}/SrTiO_{3}}$ underlies a variety of exotic physics, but its nature is still under debate. We derive an effective Hamiltonian fo
r the 2DEG at the oxide interface $mathrm{LaAlO_{3}/SrTiO_{3}}$ and find a different anisotropic Rashba SOC for the $d_{xz}$ and $d_{yz}$ orbitals. This anisotropic Rashba SOC leads to anisotropic static spin susceptibilities and also distinctive behavior of the spin Hall conductivity. These unique spin responses may be used to determine the nature of the Rashba SOC experimentally and shed light on the orbital origin of the 2DEG.
We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measu
rements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the exciting possibility of ultrafast optical-only manipulation of the valley index. The tilted field effect on the valley current in experiment is also discussed.
We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contribut
ed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all $MX_2$ monolayers. The TB model involving only the nearest-neighbor $M$-$M$ hoppings is sufficient to capture the band-edge properties in the $pm K$ valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor $M$-$M$ hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions of $M$ atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between Mo$X_{2}$ and W$X_{2}$. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in $MX_2$ monolayers, and its simplicity can be particularly useful in the study of many-body physics and physics of edge states.
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is
comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. Multiband effect in other doping regime is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.
We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the Z_2 classif
ication of time-reversal invariant insulators, thus are also topologically-protected like the edge states in the quantum spin Hall effect and the surface states in three-dimensional topological insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary.
We present a general description of topological insulators from the point of view of Dirac equations. The Z_{2} index for the Dirac equation is always zero, and thus the Dirac equation is topologically trivial. After the quadratic B term in momentum
is introduced to correct the mass term m or the band gap of the Dirac equation, the Z_{2} index is modified as 1 for mB>0 and 0 for mB<0. For a fixed B there exists a topological quantum phase transition from a topologically trivial system to a non-trivial one system when the sign of mass m changes. A series of solutions near the boundary in the modified Dirac equation are obtained, which is characteristic of topological insulator. From the solutions of the bound states and the Z_{2} index we establish a relation between the Dirac equation and topological insulators.
