An experimental setup for determining the electrical resistivity of several types of thermoelectric materials over the temperature range 20 < T < 550 C is described in detail. One resistivity measurement during temperature cycling is also explained f
or Cu0.01Bi2Te2.7Se0.3 while a second measurement is made on Yb0.35Co4Sb12 as a function of time at 400 C. Both measurements confirm that the materials are thermally stable for the temperature range and time period measured. Measurements made during temperature cycling show an irreversible decrease in the electrical resistivity of Cu0.01Bi2Te2.7Se0.3 when the measuring temperature exceeds the pressing temperature. Several other possible uses of such a system include but are not limited to studying the effects of annealing and/or oxidation as a function of both temperature and time.
Nanostructuring has been shown to be an effective approach to reduce the lattice thermal conductivity and improve the thermoelectric figure of merit. Because the experimentally measured thermal conductivity includes contributions from both carriers a
nd phonons, separating out the phonon contribution has been difficult and is mostly based on estimating the electronic contributions using the Wiedemann-Franz law. In this paper, an experimental method to directly measure electronic contributions to the thermal conductivity is presented and applied to Cu0.01Bi2Te2.7Se0.3, [Cu0.01Bi2Te2.7Se0.3]0.98Ni0.02, and Bi0.88Sb0.12. By measuring the thermal conductivity under magnetic field, electronic contributions to thermal conductivity can be extracted, leading to knowledge of the Lorenz number in thermoelectric materials.
