The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor
with critical temperature TSG = 97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p = 6.6E20 cm-3, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect (AHE) with hysteresis loops. Calculated AHE coefficient, RS = 2.0E6 m3/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for AHE in Ge(0.743)Pb(0.183)Mn(0.074)Te alloy.
We present the experimental evidence for the presence of spinodal decomposition of the magnetic ions in the Ge/1-x-y/Cr/x/Eu/y/Te samples with chemical composition varying in the range of 0.015 < x < 0.057 and 0.003 < y < 0.042. The ferromagnetic tra
nsition at temperatures 50 < T < 57 K was observed, independent of the chemical composition. The long-range carrier mediated itinerant magnetic interactions seem to be responsible for the observed ferromagnetic order. The magnetic irreversibility with coercive field H/C/ = 5?63 mT and the saturation magnetization M/S/ <? 2?6 emu/g are found to strongly depend on the chemical composition of the alloy.
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we attribute to two
mechanisms i.e. weak localization occurring at low fields and spin disorder scattering giving contribution mainly at higher magnetic fields. A pronounced hysteretic anomalous Hall effect (AHE) was observed. The estimated AHE coefficient shows a small temperature dependence and is dependent on Mn-content, with changes in the range of 10E-7 < R_S < 10E-6 m^3/C. The scaling law analysis has proven that the AHE in this system is due to the extrinsic mechanisms, mainly due to the skew scattering accompanied with the side jump processes.
We present the studies of magnetic properties of Ge/1-x/Cr/x/Te diluted magnetic semiconductor with changeable chemical composition 0.016 leq x leq 0.061. A spin-glass state (at T leq 35 K) for x = 0.016 and 0.025 and a ferromagnetic phase (at T < 60
K) for x geq 0.030 are observed. The long range carrier-mediated magnetic interactions are found to be responsible for the observed magnetic ordering for x < 0.045, while for x geq 0.045 the spinodal decomposition of Cr ions leads to a maximum and decrease of the Curie temperature, TC, with increasing x. The calculations based on spin waves model are able to reproduce the observed magnetic properties at a homogeneous limit of Cr alloying, e.g. x < 0.04, and prove that carrier mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is responsible for the observed magnetic states. The value of the Cr-hole exchange integral, Jpd, estimated via fitting of the experimental results with the theoretical model, is in the limits 0.77...0.88 eV.
