The superconducting proximity effect has played an important role in recent work searching for Majorana modes in thin semiconductor devices. Using transport measurements to quantify the changes in the semiconductor caused by the proximity effect prov
ides a measure of dynamical processes such as screening and scattering. However, in a two terminal measurement the resistance due to the interface conductance is in series with resistance of transport in the semiconductor. Both of these change, and it is impossible to separate them without more information. We have devised a new three terminal device that provides two resistance measurements that are sufficient to extract both the junction conductance and the two dimensional sheet resistance under the superconducting contact. We have compared junctions between Nb and InAs and Nb and 30% InGaAs all grown before being removed from the ultra high vacuum molecular beam epitaxy growth system. The most transparent junctions are to InAs, where the transmission coefficient per Landauer mode is greater than 0.6. Contacts made with ex-situ deposition are substantially more opaque. We find that for the most transparent junctions, the largest fractional change as the temperature is lowered is to the resistance of the semiconductor.
