We report an easy route single step synthesis of BiOCuS with and without Cu deficiency. The title compound is synthesized via solid state reaction route by encapsulation in an evacuated (10-3 Torr) quartz tube. Mixed components of the ingredients in
stoichiometric ratio (1/3Bi2O3 +0.34Bi +Cu1-x + S) are pelletized, sealed in evacuated quartz tube and heat treated for 30 hours at 500 0C. Finally the sample is allowed to cool down to room temperature. The resultant compound is black is color and could not hold in pellet form, but is powdered. X-ray diffraction Reitveld analysis is carried out on all three samples of series BiOCu1-xS with x = 0.0, 0.10 and 0.15. These samples crystallize in single phase with space group P4/nmm and with cell parameters as a = 3.868 A and c = 8.557 A for stoichiometric BiOCuS. The volume of the cell slightly increases with an increase in Cu deficiency. The co-ordinate positions are determined by fitting the observed XRD patterns of the studied samples.
The synthesis and characterization of PVA (Poly Vinyl Acetate) doped bulk MgB2 superconductor is reported here. PVA is used as a Carbon source. PVA doping effects made two distinguishable contributions: first enhancement of Jc field performance and s
econd an increase in Hc2 value, both because of carbon incorporation into MgB2 crystal lattice. The susceptibility measurement reveals that Tc decreased from 37 to 36 K. Lattice parameter a decreased from 3.085 A to 3.081 A due to the partial substitution of Carbon at Boron site. PVA doped sample exhibited the Jc values greater than 10^5 A/cm2 at 5 & 10 K at low fields; which is almost 3 times higher than the pure one, while at high fields the Jc is increased by an order of magnitude in comparison to pure MgB2. From R(T)H measurements we found higher Tc values under magnetic field for doped sample; indicating an increase in Hc2. Also the magnetization measurements exhibited a significant enhancement in Hirr value. The improved performance of PVA doped MgB2 can be attributed to the substitution of carbon at boron site in parent MgB2 and the resulting impact on the carrier density and impurity scattering. The improved flux pinning behavior could easily be seen from reduced flux pinning force plots.
