By analyzing the in-plane field magnetoconductivity, zero field transport, and thermodynamic spin magnetization in 2D correlated electron system in high mobility Si-MOS samples, we have revealed a novel high energy scale $T^*$, beyond the Fermi energ
y. In magnetoconductivity, we found a sharp onset of the novel regime $delta sigma(B,T) propto (B/T)^2$ above a density dependent temperature $T_{rm kink}(n)$, the high-energy behavior that mimics the low-temperature diffusive interaction regime. The zero field resistivity temperature dependence exhibits an inflection point $T_{rm infl}$. In thermodynamic magnetization, the weak field spin susceptibility per electron, $partial chi /partial n$ changes sign at $T_{dM/d n}$. All three notable temperatures, $T_{rm kink}$, $T_{rm infl}$, and $T_{d M/ d n}$, behave critically $propto (n-n_c)$, are close to each other, and are intrinsic to high mobility samples only; we therefore associate them with a novel energy scale $T^*$ caused by interactions in the 2DE system.
