We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an alum
inum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95 % within the wavelength range of 40--200 microns, while low resistivity (~5 ohm-cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.
The Stephans Quintet (SQ, HCG92) was observed with the Far-Infrared Surveyor (FIS) aboard AKARI in four far-infrared (IR) bands at 65, 90, 140, and 160 um. The AKARI four-band images of the SQ show far-IR emission in the intergalactic medium (IGM) of
the SQ. In particular, the 160 um band image shows single peak emission in addition to the structure extending in the North-South direction along the shock ridge as seen in the 140 um band, H2 emission and X-ray emission. Whereas most of the far-IR emission in the shocked region comes from the cold dust component, shock-powered [CII]158um emission can significantly contribute to the emission in the 160 um band that shows a single peak at the shocked region. In the shocked region, the observed gas-to-dust mass ratio is in agreement with the Galactic one. The color temperature of the cold dust component (~20 K) is lower than that in surrounding galaxies (~30 K). We discuss a possible origin of the intergalactic dust emission.
