The efficacy of strained layer threading dislocation filter structures in single crystal epitaxial layers is evaluated using numerical modeling for (001) face-centred cubic materials, such as GaAs or Si(1-x)Ge(x), and (0001) hexagonal materials such
as GaN. We find that threading dislocation densities decay exponentially as a function of the strain relieved, irrespective of the fraction of threading dislocations that are mobile. Reactions between threading dislocations tend to produce a population that is a balanced mixture of mobile and sessile in (001) cubic materials. In contrast, mobile threading dislocations tend to be lost very rapidly in (0001) GaN, often with little or no reduction in the immobile dislocation density. The capture radius for threading dislocation interactions is estimated to be approx. 40nm using cross section transmission electron microscopy of dislocation filtering structures in GaAs monolithically grown on Si. We find that the minimum threading dislocation density that can be obtained in any given structure is likely to be limited by kinetic effects to approx. 1.0e+04 to 1.0e+05 per square cm.
We examine the diffraction properties of lattice dynamical systems of algebraic origin. It is well-known that diverse dynamical properties occur within this class. These include different orders of mixing (or higher-order correlations), the presence
or absence of measure rigidity (restrictions on the set of possible shift-invariant ergodic measures to being those of algebraic origin), and different entropy ranks (which may be viewed as the maximal spatial dimension in which the system resembles an i.i.d. process). Despite these differences, it is shown that the resulting diffraction spectra are essentially indistinguishable, thus raising further difficulties for the inverse problem of structure determination from diffraction spectra. Some of them may be resolved on the level of higher-order correlation functions, which we also briefly compare.
