The layout of a new instrument designed to study the interaction of highly charged ions with surfaces, which consists of an ion source, a beamline including charge separation and a target chamber, is presented here. By varying the charge state and im
pact velocity of the projectiles separately, the dissipation of potential and kinetic energy at or below the surface can be studied independently. The target chamber offers the use of tunable metal-insulator-metal devices as detectors for internal electronic excitation, a timeof-flight system to study the impact induced particle emission and the possibility to transfer samples in situ to a UHV scanning probe microscope. Samples and detectors can be prepared in situ as well. As a first example data on graphene layers on SrTiO3 which have been irradiated with Xe36+ are presented. Key words: highly charged ions, sputtering, AFM, graphene
Thin film metal-insulator-metal junctions are used in a novel approach to investigate the dissipation of potential energy of multiply charged ions impinging on a polycrystalline metal surface. The ion-metal interaction leads to excited electrons and
holes within the top layer. A substantial fraction of these charge carriers is transported inwards and can be measured as an internal current in the thin film tunnel junction. In Ag-AlOX-Al junctions, yields of typically 0.1-1 electrons per impinging ion are detected in the bottom Al layer. The separate effects of potential and kinetic energy on the tunneling yield are investigated by varying the charges state of the Ar projectile ions from 2+ to 9+ for kinetic energies in the range from 1 to 12 keV. The tunneling yield is found to scale linearly with the potential energy of the projectile.
