We present first-principles calculations of the impact ionization rate (IIR) in the $GW$ approximation ($GW$A) for semiconductors. The IIR is calculated from the quasiparticle (QP) width in the $GW$A, since it can be identified as the decay rate of a
QP into lower energy QP plus an independent electron-hole pair. The quasiparticle self-consistent $GW$ method was used to generate the noninteracting hamiltonian the $GW$A requires as input. Small empirical corrections were added so as to reproduce experimental band gaps. Our results are in reasonable agreement with previous work, though we observe some discrepancy. In particular we find high IIR at low energy in the narrow gap semiconductor InAs.
We present a new full-potential method to solve the one-body problem, for example, in the local density approximation. The method uses the augmented plane waves (APWs) and the generalized muffin-tin orbitals (MTOs) together as basis sets to represent
the eigenfunctions. Since the MTOs can efficiently describe localized orbitals, e.g, transition metal 3$d$ orbitals, the total energy convergence with basis size is drastically improved in comparison with the linearized APW method. Required parameters to specify MTOs are given by atomic calculations in advance. Thus the robustness, reliability, easy-of-use, and efficiency at this method can be superior to the linearized APW and MTO methods. We show how it works in typical examples, Cu, Fe, Li, SrTiO$_3$, and GaAs.
We present spin wave dispersions in MnO, NiO, and $alpha$-MnAs based on the quasiparticle self-consistent $GW$ method (qsgw), which determines an optimum quasiparticle picture. For MnO and NiO, qsgw results are in rather good agreement with experimen
ts, in contrast to the LDA and LDA+U description. For $alpha$-MnAs, we find a collinear ferromagnetic ground state in qsgw, while this phase is unstable in the LDA.
