Bi2Sr2CaCu2O8+x is the only cuprate superconductor that can be made into a round-wire conductor form with a high enough critical current density Jc for applications. Here we show that the Jc(5 T,4.2 K) of such Ag-sheathed filamentary wires can be dou
bled to more than 1.4x10^5 A/cm^2 by low temperature oxygenation. Careful analysis shows that the improved performance is associated with a 12 K reduction in transition temperature Tc to 80 K and a significant enhancement in intergranular connectivity. In spite of the macroscopically untextured nature of the wire, overdoping is highly effective in producing high Jc values.
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a
seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conduc
tance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductance which can be attributed to commensurability oscillations between classical cyclotron orbits and antidot array. All mesoscopic features, surviving up to 70 K, reveal the unique electronic properties of graphene.
