We have studied the anisotropy in the in-plane resistivity and the electronic structure of isovalent Ru-substituted BaFe$_2$As$_2$ in the antiferromagnetic-orthorhombic phase using well-annealed crystals. The anisotropy in the residual resistivity co
mponent increases in proportional to the Ru dopant concentration, as in the case of Co-doped compounds. On the other hand, both the residual resistivity and the resistivity anisotropy induced by isovalent Ru substitution is found to be one order of magnitude smaller than those induced by heterovalent Co substitution. Combined with angle-resolved photoemission spectroscopy results, which show almost the same anisotropic band structure both for the parent and Ru-substituted compounds, we confirm the scenario that the anisotropy in the residual resistivity arises from anisotropic impurity scattering in the magneto-structurally ordered phase rather than directly from the anisotropic band structure of that phase.
We systematically investigated the anisotropic in-plane resistivity of the iron telluride including three kinds of impurity atoms: excess Fe, Se substituted for Te, and Cu substituted for Fe. Sizable resistivity anisotropy was found in the magneto-st
ructurally ordered phase whereas the sign is opposite ($rho_a$ $>$ $rho_b$, where the $b$-axis parameter is shorter than the $a$-axis one) to that observed in the transition-metal doped iron arsenides ($rho_a$ $<$ $rho_b$). On the other hand, our results demonstrate that the magnitude of the resistivity anisotropy in the iron tellurides is correlated with the amount of impurities, implying that the resistivity anisotropy originates from an exotic impurity effect like that in the iron arsenides. This suggests that the anisotropic carrier scattering by impurities is a universal phenomenon in the magneto-structurally ordered phase of the iron-based materials.
