We have studied the momentum dependence of the energy gap of Bi2(Sr,R)2CuOy by angleresolved photoemission spectroscopy (ARPES), particularly focusing on the difference between R=La and Eu. By comparing the gap function and characteristic temperature
s between the two sets of samples, we show that there exist three distinct energy scales, {Delta}pg, {Delta}sc0, and {Delta}eff sc0, which correspond to T* (pseudogap temperature), Tonset (onset temperature of fluctuating superconductivity), and Tc (critical temperature of coherent superconductivity). The results not only support the existence of a pseudogap state below T* that competes with superconductivity but also the duality of competition and superconducting fluctuation at momenta around the antinode below Tonset.
The recently discovered high temperature superconductor F-doped LaFeAsO and related compounds represent a new class of superconductors with the highest transition temperature (Tc) apart from the cuprates. The studies ongoing worldwide are revealing t
hat these Fe-based superconductors are forming a unique class of materials that are interesting from the viewpoint of applications. To exploit the high potential of the Fe-based superconductors for device applications, it is indispensable to establish a process that enables the growth of high quality thin films. Efforts of thin film preparation started soon after the discovery of Fe-based superconductors, but none of the earlier attempts had succeeded in an in-situ growth of a superconducting film of LnFeAs(O,F) (Ln=lanthanide), which exhibits the highest Tc to date among the Fe-based superconductors. Here, we report on the successful growth of NdFeAs(O,F) thin films on GaAs substrates, which showed well-defined superconducting transitions up to 48 K without the need of an ex-situ heat treatment.
Epitaxial films of NdFeAsO were grown on GaAs substrates by molecular beam epitaxy (MBE). All elements including oxygen were supplied from solid sources using Knudsen cells. The x-ray diffraction pattern of the film prepared with the optimum growth c
ondition showed no indication of impurity phases. Only (00l) peaks were observed, indicating that NdFeAsO was grown with the c-axis perpendicular to the substrate. The window of optimum growth condition was very narrow, but the NdFeAsO phase was grown with a very good reproducibility. Despite the absence of any appreciable secondary phase, the resistivity showed an increase with decreasing temperature.
