We study the Nernst effect and the spin Nernst effect, that a longitudinal thermal gradient induces a transverse voltage and a spin current. A mesoscopic four-terminal cross-bar device having the Rashba spin-orbit interaction (SOI) under a perpendicu
lar magnetic field is considered. For zero SOI, the Nernst coefficient peaks when the Fermi level crosses the Landau Levels. In the presence of the SOI, the Nernst peaks split, and the spin Nernst effect appears and exhibits a series of oscillatory structures. The larger SOI is or the weaker magnetic field is, the more pronounced the spin Nernst effect is. The results also show that the Nernst and spin Nernst coefficients are sensitive to the detailed characteristics of the sample and the contacts. In addition, the Nernst effect is found to survive in strong disorder than the spin Nernst effect does.
The Josephson current through an Aharonov-Bohm (AB) interferometer, in which a quantum dot (QD) is situated on one arm and a magnetic flux $Phi$ threads through the ring, has been investigated. With the existence of the magnetic flux, the relation of
the Josephson current and the superconductor phase is complex, and the system can be adjusted to $pi$ junction by either modulating the magnetic flux or the QDs energy level $varepsilon_d$. Due to the electron-hole symmetry, the Josephson current $I$ has the property $I(varepsilon_d,Phi)=I(-varepsilon_d,Phi+pi)$. The Josephson current exhibits a jump when a pair of Andreev bound states aligns with the Fermi energy. The condition for the current jump is given. In particularly, we find that the position of the current jump and the position of the maximum value of the critical current $I_c$ are identical. Due to the interference between the two paths, the critical current $I_c$ versus the QDs level $varepsilon_d$ shows a typical Fano shape, which is similar to the Fano effect in the corresponding normal device. But they also show some differences. For example, the critical current never reaches zero for any parameters, while the current in the normal device can reach zero at the destruction point.
