Two-dimensional atomic crystals (2DACs) can be mechanically assembled with precision for the fabrication of heterostructures, allowing for the combination of material building blocks with great flexibility. In addition, while conventional nanolithogr
aphy can be detrimental to most of the 2DACs which are not sufficiently inert, mechanical assembly potentially minimizes the nanofabrication processing and preserves the intrinsic physical properties of the 2DACs. In this work we study the interfacial charge transport between various 2DACs and electrical contacts, by fabricating and characterizing 2DAC-superconductor junctions through mechanical transfer. Compared to devices fabricated with conventional nanolithography, mechanically assembled devices show comparable or better interface transparency. Surface roughness at the electrical contacts is identified to be a major limitation to the interface quality.
The ability to localize and manipulate individual quasiparticles in mesoscopic structures is critical in experimental studies of quantum mechanics and thermodynamics, and in potential quantum information devices, e.g., for topological schemes of quan
tum computation. In strong magnetic field, the quantum Hall edge modes can be confined around the circumference of a small antidot, forming discrete energy levels that have a unique ability to localize fractionally charged quasiparticles. Here, we demonstrate a Dirac fermion quantum Hall antidot in graphene in the integer quantum Hall regime, where charge transport characteristics can be adjusted through the coupling strength between the contacts and the antidot, from Coulomb blockade dominated tunneling under weak coupling to the effectively non-interacting resonant tunneling under strong coupling. Both regimes are characterized by single -flux and -charge oscillations in conductance persisting up to temperatures over 2 orders of magnitude higher than previous reports in other material systems. Such graphene quantum Hall antidots may serve as a promising platform for building and studying novel quantum circuits for quantum simulation and computation.
Recently twisted bilayer graphene (t-BLG) emerges as a new strongly correlated physical platform near a magic twist angle, which hosts many exciting phenomena such as the Mott-like insulating phases, unconventional superconducting behavior and emerge
nt ferromagnetism. Besides the apparent significance of band flatness, band topology may be another critical element in determining strongly correlated twistronics yet receives much less attention. Here we report compelling evidence for nontrivial noninteracting band topology of t-BLG moire Dirac bands through a systematic nonlocal transport study, in conjunction with an examination rooted in $K$-theory. The moire band topology of t-BLG manifests itself as two pronounced nonlocal responses in the electron and hole superlattice gaps. We further show that the nonlocal responses are robust to the interlayer electric field, twist angle, and edge termination, exhibiting a universal scaling law. While an unusual symmetry of t-BLG trivializes Berry curvature, we elucidate that two $Z_2$ invariants characterize the topology of the moire Dirac bands, validating the topological edge origin of the observed nonlocal responses. Our findings not only provide a new perspective for understanding the emerging strongly correlated phenomena in twisted van der Waals heterostructures, but also suggest a potential strategy to achieve topologically nontrivial metamaterials from topologically trivial quantum materials based on twist engineering.
Studying the interplay between superconductivity and quantum magnetotransport in two-dimensional materials has been a topic of interest in recent years. Towards such a goal it is important to understand the impact of magnetic field on the charge tran
sport at the superconductor-normal channel (SN) interface. Here we carried out a comprehensive study of Andreev conductance under weak magnetic fields using diffusive superconductor- graphene Josephson weak links. We observe that the Andreev conductance is suppressed even in magnetic fields far below the upper critical field of the superconductor. The suppression of Andreev conductance depends on and can be minimized by controlling the ramping of the magnetic field. We identify that the key factor behind this suppression is the reduction of the superconducting gap due to the piling of vortices on the superconducting contacts. In devices where superconducting gap at the superconductor-graphene interface is heavily reduced by proximity effect, the enlarged vortex cores overlap quickly with increasing magnetic field, resulting in a rapid decrease of the interfacial gap. However, in weak links with relatively large effective superconducting gap the AR conductance persists up to the upper critical field. Our results provide guidance to the study of quantum material-superconductor systems in presence of magnetic field, where survival of induced superconductivity is critical.
