This work describes the development of a state-of-the-art muon spectrometer for the ISIS pulsed muon source. Conceived as a major upgrade of the highly successful EMU instrument, emphasis has been placed on making effective use of the enhanced flux n
ow available at the ISIS source. This has been achieved both through the development of a highly segmented detector array and enhanced data acquisition electronics. The pulsed nature of the ISIS beam is particularly suited to the development of novel experiments involving external stimuli, and therefore the ability to sequence external equipment has been added to the acquisition system. Finally, the opportunity has also been taken to improve both the magnetic field and temperature range provided by the spectrometer, to better equip the instrument for running the future ISIS user programme.
The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in th
e compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($mu^+ + e^-$) center at the tetrahedral As site can capture the tracks holes and therefore behaves like a donor.
