We have experimentally studied the nonlinear nature of electrical conduction in monolayer graphene devices on silica substrates. This nonlinearity manifests itself as a nonmonotonic dependence of the differential resistance on applied DC voltage bias
across the sample. At temperatures below ~70K, the differential resistance exhibits a peak near zero bias that can be attributed to self-heating of the charge carriers. We show that the shape of this peak arises from a combination of different energy dissipation mechanisms of the carriers. The energy dissipation at higher carrier temperatures depends critically on the length of the sample. For samples longer than 10um the heat loss is shown to be determined by optical phonons at the silica-graphene interface.
Near infrared pump-probe spectroscopy has been used to measure the ultrafast dynamics of photoexcited charge carriers in monolayer and multilayer graphene. We observe two decay processes occurring on 100 fs and 2 ps timescales. The first is attribute
d to the rapid electron-phonon thermalisation in the system. The second timescale is found to be due to the slow decay of hot phonons. Using a simple theoretical model we calculate the hot phonon decay rate and show that it is significantly faster in monolayer flakes than in multilayer ones. In contrast to recent claims, we show that this enhanced decay rate is not due to the coupling to substrate phonons, since we have also seen the same effect in suspended flakes. Possible intrinsic decay mechanisms that could cause such an effect are discussed.
