Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising alternative. Hol
es in III-V semiconductors have unique properties, such as strong spin-orbit interaction and weak coupling to nuclear spins, and therefore have potential for enhanced spin control and longer coherence times. Weaker hyperfine interaction has already been reported in self-assembled quantum dots using quantum optics techniques. However, challenging fabrication has so far kept the promise of hole-spin-based electronic devices out of reach in conventional III-V heterostructures. Here, we report gate-tuneable hole quantum dots formed in InSb nanowires. Using these devices we demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tuneable between hole and electron QDs, enabling direct comparison between the hyperfine interaction strengths, g-factors and spin blockade anisotropies in the two regimes.
We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nucl
ear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum dots. In the low current state, dynamic nuclear polarization efficiently compensates the Zeeman gradient due to the $g$-factor mismatch, resulting in a suppressed total Zeeman gradient. We present a theoretical model of electron-nuclear feedback that demonstrates a fixed point in nuclear polarization for nearly equal Zeeman splittings in the two dots and predicts a narrowed hyperfine gradient distribution.
Majorana fermions are particles identical to their own antiparticles. They have been theoretically predicted to exist in topological superconductors. We report electrical measurements on InSb nanowires contacted with one normal (Au) and one supercond
ucting electrode (NbTiN). Gate voltages vary electron density and define a tunnel barrier between normal and superconducting contacts. In the presence of magnetic fields of order 100 mT we observe bound, mid-gap states at zero bias voltage. These bound states remain fixed to zero bias even when magnetic fields and gate voltages are changed over considerable ranges. Our observations support the hypothesis of Majorana fermions in nanowires coupled to superconductors.
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel orientatio
n determines which momenta affect the relaxation process, so comparing relaxation for two orientations provides a direct determination of spin-orbit anisotropy. Electrical measurements of pure spin currents are shown to reveal an order of magnitude stronger relaxation for channels fabricated along the [110] crystal axis in a GaAs electron gas compared to [-110] channels, believed to result from interference between structural and bulk inversion asymmetries.
