We have constructed an asymmetric matter-wave beam splitter and a ring potential on an atom chip with Bose-Einstein condensates using radio-frequency dressing. By applying rf-field parallel to the quantization axis in the vicinity of the static trap
minima added to perpendicular rf-fields, versatile controllability on the potentials is realized. Asymmetry of the rf-induced double well is manipulated without discernible displacement of the each well along horizontal and vertical direction. Formation of an isotropic ring potential on an atom chip is achieved by compensating the gradient due to gravity and inhomogeneous coupling strength. In addition, position and rotation velocity of a BEC along the ring geometry are controlled by the relative phase and the frequency difference between the rf-fields, respectively.
We grew the single crystal of stoichiometric Tm5Si2.0Ge2.0 using a Bridgeman method and performed XRD, EDS, magnetization, ac and dc magnetic susceptibilities, specific heat, electrical resistivity and XPS experiments. It crystallizes in orthorhombic
Sm5Ge4-type structure. The mean valence of Tm ions in Tm5Si2.0Ge2.0 is almost trivalent. The 4f states is split by the crystalline electric field. The ground state exhibits the long range antiferromagnetic order with the ferromagnetically coupled magnetic moments in the ac plane below 8.01 K, while the exited states exhibit the reduction of magnetic moment and magnetic entropy and -log T-behaviors observed in Kondo materials.
