Radiation damage effects represent one of the limits for technologies to be used in harsh radiation environments as space, radiotherapy treatment, high-energy phisics colliders. Different technologies have known tolerances to different radiation fiel
ds and should be taken into account to avoid unexpected failures which may lead to unrecoverable damages to scientific missions or patient health.
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under gamma, neutrons, protons and heavy ions. Similar tests are discussed fo
r commercial DC-DC converters, also tested in operation under magnetic field.
