A spin-thermo-electronic valve with the free layer of exchange-spring type and inverse magnetoresistance is investigated. The structure has S-shaped current-voltage characteristics and can exhibit spontaneous oscillations when integrated with a conve
ntional capacitor within a resonator circuit. The frequency of the oscillations can be controlled from essentially dc to the GHz range by the circuit capacitance.
The ultraviolet (UV) photodissociation of amorphous water ice at different ice temperatures is investigated using molecular dynamics (MD) simulations and analytical potentials. Previous MD calculations of UV photodissociation of amorphous and crystal
line water ice at 10 K [S. Andersson et al., J. Chem. Phys. 124, 064715 (2006)] revealed -for both types of ice- that H atom, OH, and H2O desorption are the most important processes after photoexcitation in the uppermost layers of the ice. Water desorption takes place either by direct desorption of recombined water, or when, after dissociation, an H atom transfers part of its kinetic energy to one of the surrounding water molecules which is thereby kicked out from the ice. We present results of MD simulations of UV photodissociation of amorphous ice at 10, 20, 30, and 90 K in order to analyze the effect of ice temperature on UV photodissociation processes. Desorption and trapping probabilities are calculated for photoexcitation of H2O in the top four monolayers and the main conclusions are in agreement with the 10 K results: desorption dominates in the top layers, while trapping occurs deeper in the ice. The hydrogen atom photodesorption probability does not depend on ice temperature, but OH and H2O photodesorption probabilities tend to increase slightly (~30%) with ice temperature. We have compared the total photodesorption probability (OH+H2O) with the experimental total photodesorption yield, and in both cases the probabilities rise smoothly with ice temperature. The experimental yield is on average 3.8 times larger than our theoretical results, which can be explained by the different time scales studied and the approximations in our model.
We investigate the interplay between the thermodynamic properties and spin-dependent transport in a mesoscopic device based on a magnetic multilayer (F/f/F), in which two strongly ferromagnetic layers (F) are exchange-coupled through a weakly ferroma
gnetic spacer (f) with the Curie temperature in the vicinity of room temperature. We show theoretically that the Joule heating produced by the spin-dependent current allows a spin-thermo-electronic control of the ferromagnetic-to-paramagnetic (f/N) transition in the spacer and, thereby, of the relative orientation of the outer F-layers in the device (spin-thermo-electric manipulation of nanomagnets). Supporting experimental evidence of such thermally controlled switching from parallel to antiparallel magnetization orientations in F/f(N)/F sandwiches is presented. Furthermore, we show theoretically that local Joule heating due to a high concentration of current in a magnetic point contact or a nanopillar can be used to reversibly drive the weakly ferromagnetic spacer through its Curie point and thereby exchange couple and decouple the two strongly ferromagnetic F-layers. For the devices designed to have an antiparallel ground state above the Curie point of the spacer, the associated spin-thermionic parallel-to-antiparallel switching causes magneto-resistance oscillations whose frequency can be controlled by proper biasing from essentially DC to GHz. We discuss in detail an experimental realization of a device that can operate as a thermo-magneto-resistive switch or oscillator.
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonan
t tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.
