It is important to understand the electronic interaction between single-walled carbon nanotubes (SWNTs) and graphene in order to use them efficiently in multifunctional hybrid devices. Here we deposited SWNT bundles on graphene-covered copper and SiO
2 substrates by chemical vapor deposition and investigated the charge transfer between them by Raman spectroscopy. Our results revealed that, on both copper and SiO2 substrates, graphene donates electrons to the SWNTs, resulting in p-type doped graphene and n-type doped SWNTs.
The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the boundaries, g
rown by chemical vapor deposition (CVD) and subsequently doped by the oxidized Cu substrate. We analyze overlapped regions between 60 and 220 nm wide via Raman spectroscopy, and find that some of these overlapped boundaries contain AB stacked bilayers. The Raman spectra from the overlapped grain boundaries are distinctly different from bilayer graphene and exhibit splitting of the G band peak. The degree of splitting, peak widths, as well as peak intensities depend on the width of the overlap. We attribute these features to inhomogeneous doping by charge carriers (holes) across the overlapped regions via the oxidized Cu substrate. As a result, the Fermi level at the overlapped grain boundaries lies between 0.3 and 0.4 eV below the charge neutrality point. Our results suggest an enhancement of electrical conductivity across overlapped grain boundaries, similar to previously observed measurements(1). The dependence of charge distribution on the width of overlapping of grain boundaries may have strong implications for the growth of large-area graphene with enhanced conductivity.
In order to accommodate an increasing demand for carbon nanotubes (CNTs) with desirable characteristics one has to understand the origin of helicity of their structures. Here, through in situ microscopy we demonstrate that the nucleation of a carbon
nanotube is initiated by the formation of the carbon cap. Nucleation begins with the formation of a graphene embryo that is bound between opposite step-edges on the nickel catalyst surface. The embryo grows larger as the step-edges migrate along the surface, leading to the formation of a curved carbon cap when the steps flow across the edges of adjacent facets. Further motion of the steps away from the catalyst tip with attached rims of the carbon cap generates the wall of the nanotube. Density Functional Theory calculations bring further insight into the process, showing that step flow occurs by surface self diffusion of the nickel atoms via a step-edge attachment-detachment mechanism. Since the fact that cap forms first in the sequence of stages involved in nanotube growth, we suggest that it originates the helicity of the nanotube. Therefore, the angular distribution of catalyst facets could be exploited as a new parameter for controlling the curvature of the cap and, presumably, the helicity of the nanotube.
We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical exfoliation.
The intensity of the higher order phonon modes (relative to the G peak) is highest in SLG and decreases with increasing layers. In addition, all higher order modes are observed to upshift in frequency almost linearly with increasing graphene layers, betraying the underlying interlayer van der Waals interactions.
