After growing successfully TaP single crystal, we measured its longitudinal resistivity (rhoxx) and Hall resistivity (rhoyx) at magnetic fields up to 9T in the temperature range of 2-300K. It was found that at 2K its magnetoresistivity (MR) reaches t
o 328000 percent, at 300K to 176 percent at 8T, and both do not appear saturation. We confirmed that TaP is indeed a low carrier concentration, hole-electron compensated semimetal, with a high mobility of hole muh=371000 cm2V-1s-1, and found that a magnetic-field-induced metal-insulator transition occurs at room temperature. Remarkably, as a magnetic field (H) is applied in parallel to the electric field (E), the negative MR due to chiral anomaly is observed, and reaches to -3000 percent at 9T without any signature of saturation, too, which distinguishes with other Weyl semimetals (WSMs). The analysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MR reveals that a nontrivial Berry phase with strong offset of 0.3958 realizes in TaP, which is the characteristic feature of the charge carriers enclosing a Weyl nodes. These results indicate that TaP is a promising candidate not only for revealing fundamental physics of the WSM state but also for some novel applications.
After our first discovery of superconductivity (SC) with $T_C$=3.7 K in TlNi$_2$Se$_2$, we grew successfully a series of TlNi$_2$Se$_{2-x}$S$_x$ (0.0 $leq$ x $leq$2.0) single crystals. The measurements of resistivity, susceptibility and specific heat
were carried out. We found that SC with $T_C$=2.3 K also emerges in TlNi$_2$S$_2$ crystal, which appears to involve heavy electrons with an effective mass $m^*$=13$sim$25 $m_b$, as inferred from the normal state electronic specific heat and the upper critical field, $H_{C2}(T)$. It was found that the $T_C$ and superconducting volume fraction in TlNi$_2$Se$_{2-x}$S$_x$ crystals changes with the disorder degree induced by the partial substitution of S for Se, which is characterized by the residual resistivity ratio (textit{RRR}). The effect of the disorder on SC may provide some information for understanding the mechanism of SC in this new Ni-chalcogenide system.
Superconductivity has been first observed in TlNi$_2$Se$_2$ at T$_C$=3.7 K and appears to involve heavy electrons with an effective mass $m^*$=14$sim$20 $m_b$, as inferred from the normal state electronic specific heat and the upper critical field, H
_${C2}$(T). Although the zero-field electronic specific heat data, $C_{es}(T)$, in low temperatures (T < 1/4 T$_C$) can be fitted with a gap BCS model, indicating that TlNi$_2$Se$_2$ is a fully gapped superconductor, the two-gap BCS model presents the best fit to all the $C_{es}(T)$ data below $T_C$. It is also found that the electronic specific heat coefficient in the mixed state, $gamma_N(H)$, exhibits a textit{H}$^{1/2}$ behavior, which was also observed in some textit{s}-wave superconductors, although once considered as a common feature of the textit{d}-wave superconductors. Anyway, these results indicate that TlNi$_2$Se$_2$, as a non-magnetic analogue of TlFe$_x$Se$_2$ superconductor, is a multiband superconductor of heavy electron system.
