The morphology and characteristics of the so-called GeV gamma-ray excess detected in the Milky Way lead us to speculate about a possible common origin with the 511 keV line mapped by the SPI experiment about ten years ago. In the previous version of
our paper, we assumed 30 GeV dark matter particles annihilating into $b bar{b}$ and obtained both a morphology and a 511 keV flux (phi_{511 keV} ~ 10^{-3} ph/cm^2/s) in agreement with SPI observation. However our estimates assumed a negligible number density of electrons in the bulge which lead to an artificial increase in the flux (mostly due to negligible Coulomb losses in this configuration). Assuming a number density greater than $n_e > 10^{-3} cm^{-3}$, we now obtain a flux of 511 keV photons that is smaller than phi_{511 keV} ~ 10^{-6} ph/cm^2/s and is essentially in agreement with the 511 keV flux that one can infer from the total number of positrons injected by dark matter annihilations into $b bar{b}$. We thus conclude that -- even if 30 GeV dark matter particles were to exist-- it is impossible to establish a connexion between the two types of signals, even though they are located within the same 10 deg region in the galactic centre.
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tun
neling magnetoresistance (TMR) in single crystal Fe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii) with a monolayer of O deposited at the crystalline interface. In both cases we observe an asymmetric bias dependence of TMR and a reversal of its sign at large bias. We propose a general model to explain the bias dependence in these and similar systems reported earlier. The model predicts the existence of two distinct TMR regimes: (i) tunneling regime when the interface is modified with layers of a different insulator and (ii) resonant regime when thin metallic layers are inserted at the interface. We demonstrate that in the tunneling regime negative TMR is due to the high voltage which overcomes the exchange splitting in the electrodes, while the asymmetric bias dependence of TMR is due to the interface transmission probabilities. In the resonant regime inversion of TMR could happen at zero voltage depending on the alignment of the resonance levels with the Fermi surfaces of the electrodes. Moreover, the model predicts a regime in which TMR has different sign at positive and negative bias suggesting possibilities of combining memory with logic functions.
