One-dimensional helical liquids can appear at boundaries of certain condensed matter systems. Two prime examples are the edge of a quantum spin Hall insulator, also known as a two-dimensional topological insulator, and the hinge of a three-dimensiona
l second-order topological insulator. For these materials, the presence of a helical state at the boundary serves as a signature of their nontrivial bulk topology. Additionally, these boundary states are of interest themselves, as a novel class of strongly correlated low-dimensional systems with interesting potential applications. Here, we review existing results on such helical liquids in semiconductors. Our focus is on the theory, though we confront it with existing experiments. We discuss various aspects of the helical states, such as their realization, topological protection and stability, or possible experimental characterization. We lay emphasis on the hallmark of these states, being the prediction of a quantized electrical conductance. Since so far reaching a well-quantized conductance remained challenging experimentally, a large part of the review is a discussion of various backscattering mechanisms which have been invoked to explain this discrepancy. Finally, we include topics related to proximity-induced topological superconductivity in helical states, as an exciting application towards topological quantum computation with the resulting Majorana bound states.
We collect values of selected performance characteristics of semiconductor spin qubits defined in electrically controlled nanostructures. The characteristics are envisioned to serve as a community source for the values of figures of merit with agreed
-on definitions allowing comparison of different qubit platforms. We include characteristics on the qubit coherence, speed, fidelity, and the qubit-size of multi-qubit devices. The review focuses on collecting the values of these characteristics as reported in the literature, rather than on the details of their definitions or significance. The core of the review are thus tables and figures.
We study the effect of bias voltage on the nuclear spin polarization of a ballistic wire, which contains electrons and nuclei interacting via hyperfine interaction. In equilibrium, the localized nuclear spins are helically polarized due to the electr
on-mediated Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. Focusing here on non-equilibrium, we find that an applied bias voltage induces a uniform polarization, from both helically polarized and unpolarized spins available for spin flips. Once a macroscopic uniform polarization in the nuclei is established, the nuclear spin helix rotates with frequency proportional to the uniform polarization. The uniform nuclear spin polarization monotonically increases as a function of both voltage and temperature, reflecting a thermal activation behavior. Our predictions offer specific ways to test experimentally the presence of a nuclear spin helix polarization in semiconducting quantum wires.
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance, with spin
-flip times shorter than 100 ps. Long-distance qubit-qubit coupling can be mediated by the cavity electric field of a superconducting transmission line resonator, where we show that operation times below 20 ns seem feasible for the entangling square-root-of-iSWAP gate. The absence of Dresselhaus spin-orbit interaction (SOI) and the presence of an unusually strong Rashba-type SOI enable precise control over the transverse qubit coupling via an externally applied, perpendicular electric field. The latter serves as an on-off switch for quantum gates and also provides control over the g factor, so single- and two-qubit gates can be operated independently. Remarkably, we find that idle qubits are insensitive to charge noise and phonons, and we discuss strategies for enhancing noise-limited gate fidelities.
Phonon-induced spin relaxation in coupled lateral quantum dots in the presence of spin-orbit coupling is calculated. The calculation for single dots is consistent with experiment. Spin relaxation in double dots at useful interdot couplings is dominat
ed by spin hot spots that are strongly anisotropic. Spin hot spots are ineffective for a diagonal crystallographic orientation of the dots with a transverse in-plane field. This geometry is proposed for spin-based quantum information processing.
