Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optic
al effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of that material and an analysis of problems and perspectives.
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through
quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
