The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibi
lity with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
We present a study of the Nernst effect in amorphous 2D superconductor InO$_x$, whose low carrier density implies low phase rigidity and strong superconducting phase fluctuations. Instead of presenting the abrupt jump expected at a BCS transition, th
e Nernst signal evolves continuously through the superconducting transition as previously observed in underdoped cuprates. This contrasts with the case of Nb$_{0.15}$Si$_{0.85}$, where the Nernst signal due to vortices below T$_{c}$ and by Gaussian fluctuations above are clearly distinct. The behavior of the ghost critical field in InO$_x$ points to a correlation length which does not diverge at $T_c$, a temperature below which the amplitude fluctuations freeze, but phase fluctuations survive.
