The knowledge of the spin diffusion length $lambda_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $lambda_{A}$ using AuW stripes inserted in lateral spin-valves. Width
variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $lambda_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $lambda_{A}$ values of spin Hall effect materials.
The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex
systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.
We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin H
all effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future.
