Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimenta
lly a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-field measurements of the Anderson-localized modes. This is achieved by comparing the spectral range that Anderson localization is observed to numerical simulations and the method offers sensitivity down to ~ 1 nm.
We prove Anderson localization in a disordered photonic crystal waveguide by measuring the ensemble-averaged localization length which is controlled by the dispersion of the photonic crystal waveguide. In such structures, the localization length show
s a 10-fold variation between the fast- and the slow-light regime and, in the latter case, it becomes shorter than the sample length thus giving rise to strongly confined modes. The dispersive behavior of the localization length demonstrates the close relation between Anderson localization and the photon density of states in disordered photonic crystals, which opens a promising route to controlling and exploiting Anderson localization for efficient light confinement.
