The experimental study of edge states in atomically-thin layered materials remains a challenge due to the difficult control of the geometry of the sample terminations, the stability of dangling bonds and the need to measure local properties. In the c
ase of graphene, localised edge modes have been predicted in zig-zag and bearded edges, characterised by flat dispersions connecting the Dirac points. Polaritons in semiconductor microcavities have recently emerged as an extraordinary photonic platform to emulate 1D and 2D Hamiltonians, allowing the direct visualization of the wavefunctions in both real- and momentum-space as well as of the energy dispersion of eigenstates via photoluminescence experiments. Here we report on the observation of edge states in a honeycomb lattice of coupled micropillars. The lowest two bands of this structure arise from the coupling of the lowest energy modes of the micropillars, and emulate the {pi} and {pi}* bands of graphene. We show the momentum space dispersion of the edge states associated to the zig-zag and bearded edges, holding unidimensional quasi-flat bands. Additionally, we evaluate polarisation effects characteristic of polaritons on the properties of these states.
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially- and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum
wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that increases linearly with exciton density, whereas the radiative recombination rate increases exponentially. Under continuous, localized excitation, we measure a continuous red shift of the emission, as excitons propagate away from the excitation spot. This shift corresponds to a steady-state gradient of exciton density, measured over several tens of micrometers. Time-resolved micro-photoluminescence experiments provide information on the dynamics of recombination and transport of dipolar excitons. We account for the ensemble of experimental results by solving the nonlinear drift-diffusion equation. Quantitative analysis suggests that in such structures, exciton propagation on the scale of 10 to 20 microns is mainly driven by diffusion, rather than by drift, due to the strong disorder and the presence of nonradiative defects. Secondary exciton creation, most probably by the intense higher-energy luminescence, guided along the sample plane, is shown to contribute to the exciton emission pattern on the scale up to 100 microns. The exciton propagation length is strongly temperature dependent, the emission being quenched beyond a critical distance governed by nonradiative recombination.
We demonstrate experimental proof of principle for a stirring potential for indirect excitons. The azimuthal wavelength of this stirring potential is set by the electrode periodicity, the amplitude is controlled by the applied AC voltage, and the angular velocity is controlled by the AC frequency.
Optical control of exciton fluxes is realized for indirect excitons in a crossed-ramp excitonic device. The device demonstrates experimental proof of principle for all-optical excitonic transistors with a high ratio between the excitonic signal at th
e optical drain and the excitonic signal due to the optical gate. The device also demonstrates experimental proof of principle for all-optical excitonic routers.
