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Modern computing systems are embracing non-volatile memory (NVM) to implement high-capacity and low-cost main memory. Elevated operating voltages of NVM accelerate the aging of CMOS transistors in the peripheral circuitry of each memory bank. Aggress ive device scaling increases power density and temperature, which further accelerates aging, challenging the reliable operation of NVM-based main memory. We propose HEBE, an architectural technique to mitigate the circuit aging-related problems of NVM-based main memory. HEBE is built on three contributions. First, we propose a new analytical model that can dynamically track the aging in the peripheral circuitry of each memory bank based on the banks utilization. Second, we develop an intelligent memory request scheduler that exploits this aging model at run time to de-stress the peripheral circuitry of a memory bank only when its aging exceeds a critical threshold. Third, we introduce an isolation transistor to decouple parts of a peripheral circuit operating at different voltages, allowing the decoupled logic blocks to undergo long-latency de-stress operations independently and off the critical path of memory read and write accesses, improving performance. We evaluate HEBE with workloads from the SPEC CPU2017 Benchmark suite. Our results show that HEBE significantly improves both performance and lifetime of NVM-based main memory.
Many large-scale machine learning (ML) applications need to perform decentralized learning over datasets generated at different devices and locations. Such datasets pose a significant challenge to decentralized learning because their different contex ts result in significant data distribution skew across devices/locations. In this paper, we take a step toward better understanding this challenge by presenting a detailed experimental study of decentralized DNN training on a common type of data skew: skewed distribution of data labels across devices/locations. Our study shows that: (i) skewed data labels are a fundamental and pervasive problem for decentralized learning, causing significant accuracy loss across many ML applications, DNN models, training datasets, and decentralized learning algorithms; (ii) the problem is particularly challenging for DNN models with batch normalization; and (iii) the degree of data skew is a key determinant of the difficulty of the problem. Based on these findings, we present SkewScout, a system-level approach that adapts the communication frequency of decentralized learning algorithms to the (skew-induced) accuracy loss between data partitions. We also show that group normalization can recover much of the accuracy loss of batch normalization.
175 - Onur Mutlu , Jeremie S. Kim 2019
This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the first) example o f how a circuit-level failure mechanism can cause a practical and widespread system security vulnerability. It is the phenomenon that repeatedly accessing a row in a modern DRAM chip causes bit flips in physically-adjacent rows at consistently predictable bit locations. RowHammer is caused by a hardware failure mechanism called {em DRAM disturbance errors}, which is a manifestation of circuit-level cell-to-cell interference in a scaled memory technology. Researchers from Google Project Zero demonstrated in 2015 that this hardware failure mechanism can be effectively exploited by user-level programs to gain kernel privileges on real systems. Many other follow-up works demonstrated other practical attacks exploiting RowHammer. In this article, we comprehensively survey the scientific literature on RowHammer-based attacks as well as mitigation techniques to prevent RowHammer. We also discuss what other related vulnerabilities may be lurking in DRAM and other types of memories, e.g., NAND flash memory or Phase Change Memory, that can potentially threaten the foundations of secure systems, as the memory technologies scale to higher densities. We conclude by describing and advocating a principled approach to memory reliability and security research that can enable us to better anticipate and prevent such vulnerabilities.
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