The side-jump effect is a manifestation of the spin orbit interaction in electron scattering from an atom/ion/impurity. The effect has a broad interest because of its conceptual importance for generic spin-orbital physics, in particular the effect is
widely discussed in spintronics. We reexamine the effect accounting for the exact nonperturbative electron wave function inside the atomic core. We find that value of the effect is much smaller than estimates accepted in literature. The reduction factor is 1/Z^2, where Z is the nucleus charge of the atom/impurity. This implies that the side-jump effect is practically irrelevant for spintronics, the skew scattering and/or the intrinsic mechanism always dominate the anomalous Hall and spin Hall effects.
We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {it tunable} topological states in the presence of quantum confinement and superimposed potentials with hexagonal symmetry. We sh
ow that the electronic gaps which support chiral spin edge states can be as large as the electronic bandwidth in the heterostructure miniband. The existing lithographic technology can produce a topological insulator (TI) operating at temperature $10- 100K$. Improvement of lithographic techniques will open way to tunable room temperature TI.
The present work addresses YBa$_{2}$Cu$_{3}$O$_{y}$ at doping below x=6% where the compound is a collinear antiferromagnet. In this region YBa$_{2}$Cu$_{3}$O$_{y}$ is a normal conductor with a finite resistivity at zero temperature. The value of the
staggered magnetization at zero temperature is 0.6mu_B, the maximum value allowed by spin quantum fluctuations. The staggered magnetization is almost independent of doping. On the other hand, the Neel temperature decays very quickly from T_N=420K at x=0 to practically zero at x = 0.06. The present paper explains these remarkable properties and demonstrates that the properties result from the physics of a lightly doped Mott insulator with small hole pockets. Nuclear quadrupole resonance data are also discussed. The data shed light on mechanisms of stability of the antiferromagnetic order at x < 6%.
We revisit the problem of a single hole moving in the background of the two dimensional Heisenberg antiferromagnet. The hole is loosely bound by an impurity potential. We show that the bound state is generically a parity doublet: there are parametric
ally close bound states of opposite parity. Due to the degeneracy the bound state readily breaks local symmetries of the square lattice and this leads to formation of the long range spiral distortion of the antiferromagnetic background. A direct analogy with van der Waals forces in atomic physics is discussed.
Due to the orthorhombic distortion of the lattice, the electronic hopping integrals along the $a$ and $b$ diagonals, the orthorhombic directions, are slightly different. We calculate their difference in the LDA and find $t_{a}^{prime}-t_{b}^{prime}ap
prox 8 $meV. We argue that electron correlations in the insulating phase of La$_{2-x}$Sr$_{x}$CuO$_{4}$, i. e. at doping $xleq 0.055,$ dramatically enhance the $(t_{a}^{prime}-t_{b}^{prime}) $-splitting between the $a$- and $b$-hole valleys. In particular, we predict that the intensity of both angle-resolved photoemission and of optical absorption is very different for the $a$ and $b$ nodal points.
