Weak pinning and vortex bundles in anisotropic Ca$_{10}$(Pt$_4$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ single crystals

We report the magnetic field -- temperature ($H-T$) phase diagram of Ca$_{10}$(Pt$_4$As$_8$)[(Fe$_{1-x}$Pt$_x$)$_2$As$_2$]$_5$ ($xapprox 0.05$) single crystals, which consists of normal, vortex liquid, plastic creep and elastic creep phases. The upper critical field anisotropy is determined by a radio frequency technique via the measurements of magnetic penetration depth, $lambda$. Both, irreversibility line, $H_{irr}(T)$, and flux creep line, $H^{SPM}(T)$, are obtained by measuring the magnetization. We find that $H_{irr}(T)$ is well described by the Lindemann criterion with parameters similar to those for cuprates, while small $H^{SPM}(T)$ results in a wide plastic creep regime. The flux creep rates in the elastic creep regime are in qualitative agreement with the collective creep theory for random point defects. A gradual crossover from a single vortex to a bundles regime is observed. Moreover, we obtain $lambda(4~ text K) = 260(26)$ nm through the direct measurement of the London penetration depth by magnetic force microscopy.

Large magnetic penetration depth and thermal fluctuations in a Ca$_{10}$(Pt$_{3}$As$_{8}$)[(Fe$_{1-x}$Pt$_{x}$)$_{2}$As$_{2}$]$_{5}$ (x=0.097) single crystal

We have measured the temperature dependence of the absolute value of the magnetic penetration depth $lambda(T)$ in a Ca$_{10}$(Pt$_{3}$As$_{8}$)[(Fe$_{1-x}$Pt$_{x}$)$_{2}$As$_{2}$]$_{5}$ (x=0.097) single crystal using a low-temperature magnetic force microscope (MFM). We obtain $lambda_{ab}$(0)$approx$1000 nm via extrapolating the data to $T = 0$. This large $lambda$ and pronounced anisotropy in this system are responsible for large thermal fluctuations and the presence of a liquid vortex phase in this low-temperature superconductor with critical temperature of 11 K, consistent with the interpretation of the electrical transport data. The superconducting parameters obtained from $lambda$ and coherence length $xi$ place this compound in the extreme type MakeUppercase{romannumeral 2} regime. Meissner responses (via MFM) at different locations across the sample are similar to each other, indicating good homogeneity of the superconducting state on a sub-micron scale.

Unusual giant magnetostriction in the ferrimagnet Gd$_{2/3}$Ca$_{1/3}$MnO$_3$

We report an unusual giant linear magnetostrictive effect in the ferrimagnet Gd$_{2/3}$Ca$_{1/3}$MnO$_3$ ($T_{c} approx$80 K). Remarkably, the magnetostriction, negative at high temperature ($T approx T_{c}$), becomes positive below 15 K when the magnetization of the Gd sublattice overcomes the magnetization of the Mn sublattice. A rather simple model where the magnetic energy competes against the elastic energy gives a good account of the observed results and confirms that Gd plays a crucial role in this unusual observation. Unlike previous works in manganites where only striction associated with 3$d$ Mn orbitals is considered, our results show that the lanthanide 4$f$ orbitals related striction can be very important too and it cannot be disregarded.

Influence of ion implantation on the magnetic and transport properties of manganite films

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy CAFM), transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect or inhomogeneous changes of the local Mn3+/4+ ratio to reduce lattice strains of the irradiated areas. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low field magnetoresistance was found. Point defect disorder decreases the system magnetization but doesn t seem to change the magnetic transition temperature. As a consequence, an important decoupling between the magnetic and the metal-insulator transition is found for ion irradiated films as opposed to the classical double exchange model scenario.

Direct observation of electronic inhomogeneities induced by point defect disorder in manganite films

We have investigated the influence of point defect disorder in the electronic properties of manganite films. Real-time mapping of ion irradiated samples conductivity was performed though conductive atomic force microscopy (CAFM). CAFM images show electronic inhomogeneities in the samples with different physical properties due to spatial fluctuations in the point defect distribution. As disorder increases, the distance between conducting regions increases and the metal-insulator transition shifts to lower temperatures. Transport properties in these systems can be interpreted in terms of a percolative model. The samples saturation magnetization decreases as the irradiation dose increases whereas the Curie temperature remains unchanged.