A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $delta$-doping

We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n sim 1.08 times 10^{12} cm^{-2}$ and a mobility $mu sim 600 cm^{2} / (Vs)$ at T $sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal.

Electron-mediated ferromagnetism and small spin-orbit interaction in a molecular-beam-epitaxy grown n-type $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $delta$-doping

We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $delta$-doping. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} sim 1.7K$) and the 2DEG is brought in close proximity to the Mn layer by gating. The Anomalous Hall Effect (AHE) contribution to the total Hall resistance is shown to be about three to four orders of magnitude smaller than in the case of hole-mediated ferromagnetism indicating the presence of small spin-orbit interaction.