This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As
+ In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poissons equation and Schrodingers equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.
