We discuss the operation of the superconductor - insulator - normal-metal - insulator - superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf
) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.
