We present a theory for carrier transport in semiconducting nanoscale heterostructures that emphasizes the effects of strain at the interface between two different crystal structures. An exactly solvable model shows that the interface region, or junc
tion, acts as a scattering potential that facilitates charge separation but also supports bound interfacial states. As a case study, we model a Type-II CdS/ZnSe heterostructure. After advancing a theory similar to that employed in model molecular conductance calculations, we calculate the electron and hole photocurrents and conductances, including non-linear effects, through the junction at steady-state.
We have extended Brandts method for accurate, efficient calculations within Ginzburg-Landau theory for periodic vortex lattices at arbitrary mean induction to lattices of doubly quantized vortices.
