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We have developed a method for extracting the high-frequency noise spectral density of an rf-SQUID flux qubit from macroscopic resonant tunneling (MRT) rate measurements. The extracted noise spectral density is consistent with that of an ohmic enviro nment up to frequencies ~ 4 GHz. We have also derived an expression for the MRT lineshape expected for a noise spectral density consisting of such a broadband ohmic component and an additional strongly peaked low-frequency component. This hybrid model provides an excellent fit to experimental data across a range of tunneling amplitudes and temperatures.
A superconducting chip containing a regular array of flux qubits, tunable interqubit inductive couplers, an XY-addressable readout system, on-chip programmable magnetic memory, and a sparse network of analog control lines has been studied. The archit ecture of the chip and the infrastructure used to control it were designed to facilitate the implementation of an adiabatic quantum optimization algorithm. The performance of an eight-qubit unit cell on this chip has been characterized by measuring its success in solving a large set of random Ising spin glass problem instances as a function of temperature. The experimental data are consistent with the predictions of a quantum mechanical model of an eight-qubit system coupled to a thermal environment. These results highlight many of the key practical challenges that we have overcome and those that lie ahead in the quest to realize a functional large scale adiabatic quantum information processor.
156 - R. Harris , M.W. Johnson , S. Han 2008
Macroscopic resonant tunneling between the two lowest lying states of a bistable RF-SQUID is used to characterize noise in a flux qubit. Measurements of the incoherent decay rate as a function of flux bias revealed a Gaussian shaped profile that is n ot peaked at the resonance point, but is shifted to a bias at which the initial well is higher than the target well. The r.m.s. amplitude of the noise, which is proportional to the decoherence rate 1/T_2^*, was observed to be weakly dependent on temperature below 70 mK. Analysis of these results indicates that the dominant source of low frequency (1/f) flux noise in this device is a quantum mechanical environment in thermal equilibrium.
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