Effect of pressure on the magnetic, transport, and thermal-transport properties of the electron-doped manganite CaMn$_{1-x}$Sb$_{x}$O$_{3}$

We have demonstrated the effect of hydrostatic pressure on magnetic and transport properties, and thermal transport properties in electron-doped manganites CaMn$_{1-x}$Sb$_{x}$O$_{3}$. The substitution of Sb$^{5+}$ ion for Mn $^{4+}$site of the parent matrix causes one-electron doping with the chemical formula CaMn$^{4+}_{1-2x}$Mn$^{3+}_{x}$Sb$^{5+}_{x}$O$_{3}$ accompanied by a monotonous increase in unit cell volume as a function of $x$. Upon increasing the doping level of Sb, the magnitudes of both electrical resistivity and negative Seebeck coefficient are suppressed at high temperatures, indicating the electron doping. Anomalous diamagnetic behaviors at $x=0.05$ and 0.08 are clearly observed in field cooled dc magnetization. The effect of hydrostatic pressure on dc magnetization is in contrast to the chemical pressure effect due to Sb doping. The dynamical effect of ac magnetic susceptibility measurement points to the formation of the magnetically frustrated clusters such as FM clusters embedded in canted AFM matrix.

Effect of pressure on steplike magnetostriction of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite

e report the effect of pressure on the steplike magnetostriction of single crystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings of the ultrasharp nature of the field-induced first-order transition from a paramagnetic insulator to a ferromagnetic metal phase. The application of pressure suppresses a steplike transformation and causes a broad change in the magnetostriction. The injection of an electric current to the crystal also weakens the steplike variation in both the magnetostriction and magnetoresistance. The stabilization of ferromagnetic interaction or the delocalization of charge carriers is promoted with the applied pressure or applied current, resulting in the suppressed steplike behavior. Our findings suggest that the step phenomenon is closely related to the existence of localized carriers such as the short-range charge-orbital ordered clusters.