The superconducting properties of Sn1-xInxTe (x = 0.38 to 0.45) have been studied using magnetization and muon-spin rotation or relaxation (muSR) measurements. These measurements show that the superconducting critical temperature Tc of Sn1-xInxTe inc
reases with increasing x, reaching a maximum at around 4.8 K for x = 0.45. Zero-field muSR results indicate that time-reversal symmetry is preserved in this material. Transverse-field muon-spin rotation has been used to study the temperature dependence of the magnetic penetration depth lambda(T) in the mixed state. For all the compositions studied, lambda(T) can be well described using a single-gap s-wave BCS model. The magnetic penetration depth at zero temperature lambda(0) ranges from 500 to 580 nm. Both the superconducting gap Delta(0) at 0 K and the gap ratio Delta(0)/kBTc indicate that Sn1-xInxTe (x = 0.38 to 0.45) should be considered as a superconductor with intermediate to strong coupling.
A new class of materials, Topological Crystalline Insulators (TCIs) have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the ma
terial increases, or the signal arising from the bulk of the material can be suppressed. We report the experimental procedures to obtain high quality crystal boules of the TCI, SnTe, from which nanowires and microcrystals can be produced by the vapour-liquid-solid (VLS) technique. Detailed characterisation measurements of the bulk crystals as well as of the nanowires and microcrystals produced are presented. The nanomaterials produced were found to be stoichiometrically similar to the source material used. Electron back-scatter diffraction (EBSD) shows that the majority of the nanocrystals grow in the vicinal {001} direction to the growth normal. The growth conditions to produce the different nanostructures of SnTe have been optimised.
