Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in c
ombination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moire superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.
Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resultin
g from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure.
