We have investigated the properties of cleaved SmB$_6$ single crystals by x-ray photoelectron spectroscopy. At low temperatures and freshly cleaved samples a surface core level shift is observed which vanishes when the temperature is increased. A Sm
valence between 2.5 - 2.6 is derived from the relative intensities of the Sm$^{2+}$ and Sm$^{3+}$ multiplets. The B/Sm intensity ratio obtained from the core levels is always larger than the stoichiometric value. Possible reasons for this deviation are discussed. The B $1s$ signal shows an unexpected complexity: an anomalous low energy component appears with increasing temperature and is assigned to the formation of a suboxide at the surface. While several interesting intrinsic and extrinsic properties of the SmB$_6$ surface are elucidated in this manuscript no clear indication of a trivial mechanism for the prominent surface conductivity is found.
We report about the energy and momentum resolved optical response of black phosphorus (BP) in its bulk form. Along the armchair direction of the puckered layers we find a highly dispersive mode that is trongly suppressed in the perpendicular (zig-zag
) direction. This mode emerges out of the single-particle continuum for finite values of momentum and is therefore interpreted as an exciton. We argue that this exciton, which has already been predicted theoretically for phosphorene -- the monolayer form of BP -- can be detected by conventional optical spectroscopy in the two-dimensional case and might pave the way for optoelectronic applications of this emerging material.
We investigated LAO - STO heterointerfaces grown either in oxygen rich or poor atmosphere by soft x-ray spectroscopy. Resonant photoemission across the Ti L$_{2,3}$ absorption edge of the valence band and Ti 2p core level spectroscopy directly monito
r the impact of oxygen treatment upon the electronic structure. Two types of Ti$^{3+}$ related charge carriers are identified. One is located at the Fermi energy and related to the filling of the STO conduction band. It appears for low oxygen pressure only. The other one is centered at E$_{B}$ $approx$ 1 eV and independent of the oxygen pressure during growth. It is probably due to defects. The magnitude of both excitations is comparable. It is shown that low oxygen pressure is detrimental for the Ti - O bonding. Our results shed light on the nature of the charge carriers in the vicinity of the LAO - STO interface.
