We use fermionic path integral quantum Monte Carlo to study the effects of fermion flavor on the physical properties of dipolar exciton condensates in double layer systems. We find that by including spin in the system weakens the effective interlayer
interaction strength, yet this has very little effect on the Kosterlitz-Thouless transition temperature. We further find that, to obtain the correct description of screening, it is necessary to account for correlation in both the interlayer and intralayer interactions. We show that while the excitonic binding cannot completely surpress screening by additional fermion flavors, their screening effectiveness is reduced leading to a much higher transition temperatures than predicted with large-N analysis.
Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band structure tr
eatment, since it poses a huge computational challenge. We have proposed here an efficient method for calculating full three-dimensionally coupled quantum transport in nanowire transistors including full band structure. We have shown the power of the method by simulating hole transport in p-type Ge nanowire transistors. The hole band structure obtained from our nearest neighbor sp3s* tight binding Hamiltonian agrees well qualitatively with more complex and accurate calculations that take third nearest neighbors into account. The calculated I-V results show how shifting of the energy bands due to confinement can be accurately captured only in a full band full quantum simulation.
Results of quantum mechanical simulations of the influence of edge disorder on transport in graphene nanoribbon metal oxide semiconductor field-effect transistors (MOSFETs) are reported. The addition of edge disorder significantly reduces ON-state cu
rrents and increases OFF-state currents, and introduces wide variability across devices. These effects decrease as ribbon widths increase and as edges become smoother. However the bandgap decreases with increasing width, thereby increasing the band-to-band tunneling mediated subthreshold leakage current even with perfect nanoribbons. These results suggest that without atomically precise edge control during fabrication, MOSFET performance gains through use of graphene will be difficult to achieve.
