We present Hall-effect measurements of two-leg ladder compounds Sr_{14-x}Ca_xCu_24O_41 (0 <= x <= 11.5) with the aim to determine the number of carriers participating in dc transport. Distribution of holes between the ladder and chain subsystems is o
ne of the crucial questions important for understanding the physics of these compounds. Our Hall effect and resistivity measurements show typical semiconducting behavior for x < 11.5. However, for x=11.5, the results are completely different, and the Hall coefficient and resistivity behavior is qualitatively similar to that of high temperature copper-oxide superconductors. We have determined the effective number of carriers at room temperature and compared it to the number of holes in the ladders obtained by other experimental techniques. We propose that going from x=0 to x=11.5 less than 1 hole per formula unit is added to the ladders and is responsible for a pronounced change in resistivity with Ca doping.
At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the interface,
some works indicate a much broader spatial extension, thereby questioning its origin. Here we provide for the first time a direct determination of the carrier density profile of this system through resistance profile mappings collected in cross-section LaAlO3/SrTiO3 samples with a conducting-tip atomic force microscope (CT-AFM). We find that, depending upon specific growth protocols, the spatial extension of the high-mobility electron gas can be varied from hundreds of microns into SrTiO3 to a few nanometers next to the LaAlO3/SrTiO3 interface. Our results emphasize the potential of CT-AFM as a novel tool to characterize complex oxide interfaces and provide us with a definitive and conclusive way to reconcile the body of experimental data in this system.
We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High mobility conduction is observed at low deposition oxygen pressures (PO2 < 10^-5 mb
ar) and has a three-dimensional character. However, at higher PO2 the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low PO2, other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.
